METAL-DIELECTRIC INTERFACES IN GIGASCALE ELECTRONICS IBD

Sinopse

Preface1. Introduction1.1 Metal-dielectric interfaces in IC chips1.2 Materials choices1.3 Thermal and electrical stability2. Metal-Dielectric Diffusion Processes: Fundamentals2.1 Thermal diffusion2.2 Field-enhanced ion drift2.3 Thermodynamics and chemical interactions2.4 Summary3. Experimental Techniques3.1 Test structures3.2 Electrical measurements3.3 Elemental characterizations3.4 Summary4. Al-Dielectric Interfaces4.1 Al-SiO2 interface4.2 Al/low-k dielectric interfaces4.3 Chemical identification of Al-ion drift4.4 SiO2 as a dielectric barrier against Al-ion drift4.5 Summary5. Cu-Dielectric Interfaces5.1 Stability of Cu-SiO2 in an oxygen-free environment5.2 Instability of Cu-SiO2 in an oxygen-containing environment5.3 Origin of Cu ions in SiO25.4 Cu ion diffusivity inside SiO25.5 Cu ions in porous low-k dielectrics5.6 Pre-cleaning of Cu/low-k dielectrics5.7 Cu atoms in porous low-k dielectrics5.8 Dielectrics containing no oxygen5.9 Summary6. Barrier Metal-Dielectric Interfaces6.1 Barrier metals on SiO26.2 Barrier metals on low-k dielectrics7. Self-Forming Barriers7.1 General considerations7.2 Cu(Al) self-forming barrier7.3 Cu(Mg) self-forming barrier 7.4. Cu(Mn) self-forming barrier7.5 Refractory metal self-forming barrier alloys7.6 Summary8. Kinetics of Ion Drift8.1 Ion distribution simulations8.2 Leakage current8.3 C-V characteristics8.4 Summary9. Time-Dependent Dielectric Breakdown (TDDB) and Future Directions9.1 Time-dependent dielectric breakdown (TDDB)9.2 Dielectric pore-sealing9.3 Resistance-switching memory9.4 Summary