RESISTIVE RAM AND PERIPHERAL CIRCUITRY IBD

Sinopse

This bookáis writtenáas an introductory textbook on Resistive Random Access Memory (ReRAM). ReRAM is a prominent emerging memory among other competing Non-Volatile Memories (NVM) seeking to replace flash memory. This bookáis basedáon theáauthorâÇÖsápeer-reviewed researcháconductedáat the Chair of Computer Architecture, FAU, Germany.áReferring to his research and the most relevant research from the literature, the author presents the developments in this fieldáconcisely.áThe purpose is to clarify basic concepts and introduce the reader to ReRAM with an emphasis on circuit design. Hence, this book is written for university students considering a career in the semiconductor industry. SinceátheáauthorâÇÖsáresearch was conductedáin collaborationáwith a silicon foundry, hardware engineers will find this book practical and industry-relevant. Researchers in the field of In-Memory Computing will also benefit from this book since the NVM array is theábasicásubstrate for such computing paradigms.áThis three-part book condenses the research and development of the last decade into eight chapters.áInáPart I, a good foundation is laidáfor understanding the individual device structure, its electrical characteristics, and modeling methodology.áThe different array configurations in which these memory devicesáare fabricatedáare also discussed. In Part II, the peripheralácircuitsá-theáCMOS circuits around the ReRAM array are discussed. They include sense amplifiers, programming circuits, and row/column access circuits. Recent developmentsásucháas the possibility to performácertainácomputing tasks in the ReRAMáarrayáare discussedáin Part III.